Researchers design ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection
Researchers from Russia's Alferov University, ITMO University, Far Eastern Branch of Russian Academy of Sciences, Peter the Great St. Petersburg Polytechnic University, Skolkovo Institute of Science and Technology and China's Qingdao Innovation and Development Center have developed a novel design for a perovskite electrochemical cell for light-emission and light-detection, where the active layer consists of a composite material made of halide perovskite microcrystals, polymer support matrix, and added mobile ions.
Schematic diagrams of (a) the typical PeLED device structure, where CTL - charge transfer layer, QD - quantum dots and (b) the team's PeLEC device structure, where SWCNT - single-walled carbon nanotubes. Image from Opto-Electronic Advances.
The team explained that while halide perovskite light-emitting devices exhibit exceptional properties such as high efficiency, high color purity, and broad color gamut, their industrial integration generally suffers from the technological complexity of devices' multilayer structure alongside in-operation induced heating poor stability. Halide perovskite light-emitting electrochemical cells are a novel type of perovskite optoelectronic device that differs from the perovskite light-emitting diodes by a simple monolayered architecture.