Researchers combine theoretical and experimental approaches to examine and reduce losses of wide bandgap Br-rich perovskite pin devices
Researchers at the University of Oxford and the University of Potsdam have combined theoretical and experimental approaches to understand and reduce the losses of wide bandgap Br-rich perovskite pin devices at open-circuit voltage (VOC) and short-circuit current (JSC) conditions.
A mismatch between the internal quasi-Fermi level splitting (QFLS) and the external VOC is detrimental for these devices. The team demonstrated that modifying the perovskite top-surface with guanidinium-Br and imidazolium-Br forms a low-dimensional perovskite phase at the n-interface, suppressing the QFLS-VOC mismatch, and boosting the VOC.