Researchers manage to design perovskite field-effect transistors by ion transport mitigation
Researchers from the UK's University of Bath and Germany's Max Planck Institute for Polymer Research have developed a way to make perovskite-based components for low-cost electronics.
The physicists have found a way to make perovskite-based transistors, while overcoming the problem of the material's ion content interfering with the flow of electronic current through a transistor. This breakthrough may pave the way for research into greener electronic components for low-cost electronic devices.