Researchers develop a method for scalable fabrication of inch-sized FAPbI3 perovskite wafers for highly sensitive near-infrared photodetection
Researchers from China's Hebei University of Technology have developed a scalable method combining physical thermal field and chemical bonding to fabricate inch-sized FAPbI3 wafers. By integrating 120 °C hot-pressing to stabilize the photoactive α phase and polyaniline polymer to conduct and passivate the grain boundaries, the team obtained quasi-single crystal FAPbI3 wafers on a large scale.
This approach reportedly overcomes the critical challenges of phase impurities and high-density defects, enhancing the phase stability of the FAPbI3 wafers.