Researchers from China's Hebei University of Technology have developed a scalable method combining physical thermal field and chemical bonding to fabricate inch-sized FAPbI3 wafers. By integrating 120 °C hot-pressing to stabilize the photoactive α phase and polyaniline polymer to conduct and passivate the grain boundaries, the team obtained quasi-single crystal FAPbI3 wafers on a large scale.
This approach reportedly overcomes the critical challenges of phase impurities and high-density defects, enhancing the phase stability of the FAPbI3 wafers.
As a result, the FAPbI3 wafer-based photodetector exhibits an impressive external quantum efficiency of 312% at 854 nm near-infrared wavelength at 5 V bias, accompanied by a detectivity (D*) of 4.69 × 1014 Jones and rapid response time in microsecond-scale.
This performance surpasses conventional solution-grown single crystals, providing a scalable foundation for future integrated perovskite optoelectronic devices.
The team expects that this rapid, scalable new strategy will provide a scalable material basis for future wafer-scale perovskite optoelectronic integration technology.
