Technical / research - Page 3

Researchers at the Korea Advanced Institute of Science and Technology (KAIST), Yonsei University, Gwangju Institute of Science and Technology (GIST) and Korea Institute of Ceramic Engineering and Technology (KICET) have reported a high-efficiency and high-stability organic-inorganic hybrid solar cell production technology that maximizes near-infrared light capture beyond the existing visible light range.

The research team suggested a hybrid next-generation device structure with organic photo-semiconductors that complements perovskite materials limited to visible light absorption and expands the absorption range to near-infrared. In addition, they focused on a common issue that mainly occurs in the structure and developed a solution to this problem by introducing a dipole layer - a thin material layer that controls the energy level within the device to facilitate charge transport and forms an interface potential difference to improve device performance.

Researchers from Helmholtz Zentrum Berlin (HZB) and École Polytechnique Fédérale de Lausanne (EPFL) have presented optimization strategies for top cell processing and integration into silicon heterojunction (SHJ) bottom cells based on industrial Czochralski (Cz)-Si wafers of 140 μm thickness. 

Schematic illustration of the perovskite/silicon tandem solar cell based on 140 μm Cz-Si. Image credit: ACS Applied Materials & Interfaces

The team showed that combining the self-assembled monolayer [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) with an additional phosphonic acid (PA) with different functional groups, can improve film formation when used as a hole transport layer improving wettability, minimizing shunt fraction and reducing nonradiative losses at the buried interface. 

Perovskite solar cells (PSCs) that incorporate a 2D/3D perovskite layer tend to demonstrate enhanced stability compared to that of their purely 3D counterparts, possibly thanks to the superior chemical stability of the 2D perovskite layer. However, the poor electrical properties of the 2D perovskite layer also limit further improvement of device performance. Moreover, the most effective hole transport layer (HTL) in 2D/3D PSCs, lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI)-doped 2,2′,7,7′-tetrakis(N,N-di(4-methoxyphenyl)amino)-9,9-spirobifluorene (spiro-OMeTAD), usually needs prolonged exposure to air to improve its conductivity, which to some extent increases the risk of water/oxygen infiltrating into the perovskite layer, leading to the degradation of the perovskite active layer.

Researchers at China's Henan University and Chinese Academy of Sciences (CAS) have developed a multifunctional dopant, tin oxysulfide (SnSO) in the spiro-OMeTAD layer, to improve the efficiency and stability simultaneously.

Researchers from Australia’s University of New South Wales (UNSW) Sydney have developed a defects passivation strategy for chloride-iodide-based perovskite. The team targeted the hard-to-avoid local defects in chloride-iodide-based perovskites, using two organic halide passivators named 4-chlorobenzylammonium chloride and 4-chlorobenzylammonium bromide. 

The scientists passivate both the surface and bulk of the perovskite thin film. The surface of the perovskite thin film is passivated with the bulky organic benzylammonium cations. The bulk of the perovskite thin film is passivated with the diffusion of chlorine or bromine. 

Researchers at the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) and the Center for Hybrid Organic Inorganic Semiconductors for Energy (CHOISE), an Energy Frontier Research Center (EFRC), University of Wisconsin-Madison, University of Colorado Boulder, Duke University and University of Utah have discovered a new process to induce chirality in halide perovskite semiconductors, which could open the door to cutting-edge electronic applications.

The development is the latest in a series of advancements made by the team involving the introduction and control of chirality. Chirality refers to a structure that cannot be superimposed on its mirror image, such as a hand, and allows greater control of electrons by directing their “spin.” Most traditional optoelectronic devices in use today exploit control of charge and light but not the spin of the electron.

Researchers from China's Dongguan University of Technology and Xi'an Jiaotong University have developed a spontaneous cooling strategy with a hot-pressing technique that enables the production of high-purity, wafer-scale, pinhole-free perovskite wafers with a reflective surface. 

This method can, according to the team, be extended to a variety of perovskite wafers, including organic-inorganic, 2D, and lead-free perovskites. The size of the wafer (with diameters of 10, 15, and 20 mm) can be tailored by changing the mold.

Researchers at Chinese Academy of Sciences (CAS) have fabricated an intermediate recombination layer (IRL) featuring a heavily doped boron/phosphorus polysilicon tunneling junction, with tunnel oxide passivated contact (TOPCon) silicon cells serving as the bottom cell for perovskite/TOPCon tandem solar cells (TSCs). 

In perovskite/silicon TSCs, the IRL is an important structure electrically connecting the top-side perovskite and bottom-side silicon sub-cells, significantly influencing the overall device performance. The traditional IRL often uses ITO materials to ensure high transmittance and good electrical properties, which, however, usually leads to issues such as sputtering damage and low temperature process limitations.

The properties of 3D halide perovskites, such as mixed ionic–electronic conductivity and feasible ion migration, have enabled them to challenge traditional memristive materials. However, issues like poor moisture stability and difficulty in controlling ion transport due to their polycrystalline nature have hindered their use as a neuromorphic hardware. Recently, 2D halide perovskites have emerged as promising artificial synapses owing to their phase versatility, microstructural anisotropy in electrical and optoelectronic properties, and excellent moisture resistance. However, their asymmetrical and nonlinear conductance changes still limit the efficiency of training and accuracy of inference. 

Now, researchers from Seoul National University, Korea University, Sungkyunkwan University, Pohang University of Science and Technology and University of Southern California have achieved highly linear and symmetrical conductance changes in Dion–Jacobson 2D perovskites. 

While formamidinium lead triiodide (FAPbI₃) perovskite can be used to create highly efficient perovskite solar cells (PSCs), the thermodynamically unstable α-phase poses a challenge to device long-term stability. Thermal annealing is essential for producing high-quality polycrystalline films that stabilize the α-FAPbI₃ phase, but it also induces partial decomposition of FAPbI₃ into PbI₂, leading to extra phase instability of FAPbI₃ films.

Researchers from the University of Science and Technology of China, Chinese Academy of Sciences, NingboTech University and Nankai University have developed a zero dimensional (0D) perovskite-decorated strategy to enhance the intrinsic stability of FAPbI₃ film by stabilization of the initially formed α-FAPbI₃ phase. 

Researchers from City University of Hong Kong, National Renewable Energy Laboratory (NREL) and Imperial College London have improved the long-term stability of perovskite solar cells with an atomic-layer deposition (ALD) method that replaces the fullerene electron transport layer with tin oxide. 

Professor Zhu Zonglong (left) and Dr Gao Danpeng of City University of Hong Kong hold their innovative solar cells. Image credit: Eurekalert

The team started by depositing the perovskite and the hole-transporter layer in a single step. Then, they used ALD to create an oxygen-deficient tin oxide layer to reduce the band offset to a thicker, overgrown layer of normal tin oxide. Solar cells had a power conversion efficiency of more than 25%, and they retained more than 95% of efficiency after 2000 hours of maximum power point operations at 65°C.