Researchers at Empa, National University of Singapore (NUS) and Helmholtz Institute Erlangen-Nürnberg for Renewable Energy HI ERN have reported novel electrical and optical enhancement approaches to maximize the performance of perovskite front cells. 

The team introduced new electrical and optical techniques, using methyldiammonium diiodide and adjusting the optical interference spectrum. This resulted in a record efficiency of 20.2% (21.8% by J-V scan) for a semi-transparent perovskite cell and 81.5% average near-infrared transmittance. 

Researchers at Graphenea, University of Utah and Kairos Sensors have examined a perovskite-based graphene field effect transistor (P-GFET) device for X-ray detection.

The device architecture consisted of a commercially available GFET-S20 chip, produced by Graphenea, with a layer of methylammonium lead iodide (MAPbI₃) perovskite spin coated onto the top of it. This device was exposed to the field of a molybdenum target X-ray tube with beam settings between 20 and 60 kVp (X-ray tube voltage) and 30–300 μA (X-ray tube current). Dose measurements were taken with an ion-chamber and thermo-luminescent dosimeters and used to determine the sensitivity of the device as a function of the X-ray tube voltage and current, as well as source-drain voltage.